EUV mask

E730663

An EUV mask is a highly specialized reflective photomask used in extreme ultraviolet lithography to pattern nanometer-scale features onto semiconductor wafers.

All labels observed (3)

Label Occurrences
EUV mask canonical 1
EUV mask blank 1
EUV photomask 1

How this entity was disambiguated

Statements (55)

Predicate Object
instanceOf lithography mask ⓘ
photomask ⓘ
reflective mask ⓘ
designedFor EUV scanners ⓘ
high numerical aperture lithography systems ⓘ
developedFor high-volume manufacturing in EUV lithography ⓘ
hasChallenge CD (critical dimension) uniformity control ⓘ
line-edge roughness control ⓘ
mask 3D effects ⓘ
mask defect mitigation ⓘ
shadowing effects at high NA ⓘ
hasCoating multilayer Mo/Si mirror stack ⓘ
hasFeature defect sensitivity at multilayer and absorber levels ⓘ
multilayer Bragg reflector ⓘ
patterned absorber ⓘ
pellicle or protective membrane (in many production tools) ⓘ
reflective operation at EUV wavelengths ⓘ
hasLayer absorber layer ⓘ
backside coating ⓘ
buffer layer ⓘ
capping layer ⓘ
multilayer reflective stack ⓘ
hasMaterial molybdenum ⓘ
silicon ⓘ
tantalum boron nitride absorber ⓘ
tantalum nitride absorber ⓘ
tantalum-based absorber ⓘ
hasSubstrateMaterial ULE glass ⓘ
fused silica (for some early designs) ⓘ
ultra-low thermal expansion glass ⓘ
hasType reflective photomask ⓘ
inspectedBy actinic EUV inspection tools ⓘ
electron-beam inspection tools ⓘ
manufacturedBy specialized mask shops ⓘ
operatesAtWavelength 13.5 nm ⓘ
relatedTo EUV mask blank ⓘ
linked to: EUV mask

EUV pellicle ⓘ
EUV scanner ⓘ
requires actinic inspection ⓘ
cleanroom handling ⓘ
mask blank defect control ⓘ
nanometer-scale patterning of absorber layer ⓘ
precision multilayer deposition ⓘ
vacuum-compatible materials ⓘ
standardizedBy SEMI standards (partially) ⓘ
usedBy integrated device manufacturers ⓘ
semiconductor foundries ⓘ
usedFor patterning nanometer-scale features ⓘ
patterning semiconductor wafers ⓘ
usedIn 3 nm technology node ⓘ
5 nm technology node ⓘ
advanced DRAM manufacturing ⓘ
extreme ultraviolet lithography ⓘ
logic chip manufacturing ⓘ
sub-10 nm technology nodes ⓘ

How these facts were elicited

Referenced by (3)

Full triples — surface form annotated when it differs from this entity's canonical label.

EUV lithography → keyComponent → EUV mask ⓘ
EUV pellicle → appliedTo → EUV photomask ⓘ
linked to: EUV mask
EUV mask → relatedTo → EUV mask blank ⓘ
linked to: EUV mask