TLC (triple-level cell)

E232179

TLC (triple-level cell) is a type of NAND flash memory that stores three bits of data per cell, offering higher storage density at lower cost but typically with reduced endurance and performance compared to single- and multi-level cell technologies.

All labels observed (1)

Label Occurrences
TLC (triple-level cell) canonical 6

How this entity was disambiguated

Statements (44)

Predicate Object
instanceOf NAND flash memory technology ⓘ
non-volatile memory cell type ⓘ
abbreviation TLC ⓘ
benefit increased storage capacity per die ⓘ
reduced cost per unit of storage ⓘ
cellLevels 8 ⓘ
cellLevelsExplanation TLC uses eight distinct charge levels to encode three bits per cell ⓘ
commonIn mass-market consumer storage devices ⓘ
comparedTo MLC (multi-level cell) ⓘ
SLC (single-level cell) ⓘ
dataRetention typically lower than SLC and MLC at same conditions ⓘ
fullName triple-level cell ⓘ
hasHigherStorageDensityThan MLC (multi-level cell) ⓘ
SLC (single-level cell) ⓘ
hasLowerCostPerBitThan MLC (multi-level cell) ⓘ
SLC (single-level cell) ⓘ
hasLowerEnduranceThan MLC (multi-level cell) ⓘ
SLC (single-level cell) ⓘ
hasLowerPerformanceThan MLC (multi-level cell) ⓘ
SLC (single-level cell) ⓘ
lessCommonIn high-end enterprise SSDs ⓘ
limitation greater sensitivity to cell-to-cell interference ⓘ
greater sensitivity to charge leakage over time ⓘ
reduced program/erase cycle endurance ⓘ
notableProperty higher bit error rate than SLC and MLC at similar process nodes ⓘ
requires more precise charge level sensing than SLC and MLC ⓘ
typically relies heavily on error correction codes ⓘ
typically uses wear-leveling algorithms to extend lifespan ⓘ
programOperation requires multiple program-and-verify steps per cell ⓘ
readLatency typically higher than SLC and MLC ⓘ
requires advanced flash controller algorithms ⓘ
strong error correction coding (ECC) ⓘ
storesBitsPerCell 3 ⓘ
three bits ⓘ
technologyGeneration later generation than SLC and early MLC ⓘ
tradeOff higher capacity versus lower endurance ⓘ
lower cost per gigabyte versus reduced write performance ⓘ
typicalUseCase USB flash drives ⓘ
consumer solid-state drives ⓘ
mainstream client SSDs ⓘ
memory cards ⓘ
usedIn 3D NAND flash ⓘ
planar NAND flash ⓘ
writeLatency typically higher than SLC and MLC ⓘ

How these facts were elicited

Referenced by (6)

Full triples — surface form annotated when it differs from this entity's canonical label.

3D NAND → canUseCellType → TLC (triple-level cell) ⓘ
SLC (single-level cell) → comparedTo → TLC (triple-level cell) ⓘ
SLC (single-level cell) → hasEnduranceAdvantageOver → TLC (triple-level cell) ⓘ
SLC (single-level cell) → hasReliabilityAdvantageOver → TLC (triple-level cell) ⓘ
MLC (multi-level cell) → hasMoreEnduranceThan → TLC (triple-level cell) ⓘ
MLC (multi-level cell) → hasLowerDensityThan → TLC (triple-level cell) ⓘ