“Design of ion-implanted MOSFET’s with very small physical dimensions”

E809917

“Design of ion-implanted MOSFET’s with very small physical dimensions” is the seminal 1974 paper by Robert H. Dennard and colleagues that introduced the scaling theory for MOSFETs, forming the basis of Dennard scaling and decades of CMOS miniaturization.

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Predicate Object
instanceOf scientific paper ⓘ
seminal work in microelectronics ⓘ
affiliationOfAuthors IBM Thomas J. Watson Research Center ⓘ
author A. R. LeBlanc ⓘ
E. Bassous ⓘ
F. H. Gaensslen ⓘ
H. Yu ⓘ
Robert H. Dennard ⓘ
V. L. Rideout ⓘ
basisFor Dennard scaling law ⓘ
linked to: Dennard scaling

classical CMOS constant-field scaling ⓘ
citedFor formalization of MOSFET constant-field scaling ⓘ
origin of Dennard scaling concept ⓘ
contribution analyzed short-channel effects in scaled MOSFETs ⓘ
demonstrated that power density can remain approximately constant under scaling ⓘ
formulated constant-field scaling rules for MOSFETs ⓘ
provided design guidelines for very small MOSFETs using ion implantation ⓘ
related device performance to geometric and voltage scaling factors ⓘ
showed how to scale MOSFET dimensions and voltages to maintain electric fields ⓘ
field integrated circuit design ⓘ
microelectronics ⓘ
semiconductor device physics ⓘ
hasImpactOn digital integrated circuits ⓘ
microprocessor design ⓘ
semiconductor manufacturing roadmaps ⓘ
influenced CMOS technology scaling for several decades ⓘ
Moore’s law implementation in CMOS ⓘ
VLSI design methodologies ⓘ
introducesConcept Dennard scaling ⓘ
keyIdea adjust doping using ion implantation to control short-channel behavior ⓘ
predict improvements in speed and density with scaling ⓘ
scale all linear dimensions by a factor k ⓘ
scale voltages by the same factor k to keep electric fields constant ⓘ
language English ⓘ
mainSubject CMOS miniaturization ⓘ
MOSFET scaling theory ⓘ
ion-implanted MOSFETs ⓘ
publicationYear 1974 ⓘ
publishedIn IEEE Journal of Solid-State Circuits ⓘ
recognizedAs foundational paper for CMOS scaling theory ⓘ
topic electric field distribution in scaled devices ⓘ
power dissipation in scaled MOSFETs ⓘ
short-channel MOSFET design ⓘ
threshold voltage control via ion implantation ⓘ

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Dennard scaling → describedIn → “Design of ion-implanted MOSFET’s with very small physical dimensions” ⓘ