Gunn effect

E708821

The Gunn effect is an electronic phenomenon in certain semiconductors where negative differential resistance leads to high-frequency oscillations and microwave generation under strong electric fields.

All labels observed (1)

Label Occurrences
Gunn effect canonical 2

How this entity was disambiguated

Statements (46)

Predicate Object
instanceOf electronic phenomenon ⓘ
transport phenomenon in semiconductors ⓘ
belongsToField semiconductor device physics ⓘ
solid-state physics ⓘ
causes formation of high-field domains ⓘ
propagating charge domains ⓘ
hasApplication electronic oscillators for communication systems ⓘ
frequency generation without resonant circuits ⓘ
laboratory microwave instrumentation ⓘ
solid-state microwave sources ⓘ
hasConsequence domain transit-time oscillations ⓘ
spatially inhomogeneous electric field distribution ⓘ
hasDiscoverer J. B. Gunn ⓘ
hasDiscoveryYear 1963 ⓘ
hasFrequencyRange microwave frequencies ⓘ
hasKeyParameter electron drift velocity-field characteristic ⓘ
threshold electric field ⓘ
hasTypicalFrequencyRange from a few GHz to tens of GHz ⓘ
isBasedOn intervalley electron transfer ⓘ
transfer of electrons to higher-energy satellite valleys ⓘ
isDifferentFrom avalanche breakdown ⓘ
tunnel diode negative resistance ⓘ
isExplainedBy negative slope region of velocity–field curve ⓘ
isModeledBy Ridley–Watkins–Hilsum theory ⓘ
isNamedAfter J. B. Gunn ⓘ
isObservedUnder constant voltage bias ⓘ
proper sample length and contact configuration ⓘ
isUtilizedIn Gunn diodes ⓘ
linked to: Gunn diode

local oscillators in receivers ⓘ
microwave oscillators ⓘ
microwave signal generators ⓘ
radar speed guns ⓘ
leadsTo current oscillations ⓘ
voltage oscillations ⓘ
occursIn certain compound semiconductors ⓘ
gallium arsenide (GaAs) ⓘ
linked to: gallium arsenide

indium phosphide (InP) ⓘ
other III-V semiconductors ⓘ
occursInDeviceRegion bulk of the semiconductor ⓘ
requiresBias dc bias above threshold field ⓘ
requiresCondition strong electric field ⓘ
requiresMaterialProperty multi-valley conduction band ⓘ
suitable intervalley energy separation ⓘ
requiresProperty negative differential resistance ⓘ
resultsIn high-frequency oscillations ⓘ
microwave generation ⓘ

How these facts were elicited

Referenced by (2)

Full triples — surface form annotated when it differs from this entity's canonical label.

Esaki–Tsu relation → relatedTo → Gunn effect ⓘ
Gunn diode → exploitsEffect → Gunn effect ⓘ