resonant tunneling diode
E708817
A resonant tunneling diode is a quantum-effect semiconductor device that exploits resonant tunneling through double potential barriers to achieve negative differential resistance and ultra-fast switching.
All labels observed (1)
| Label | Occurrences |
|---|---|
| resonant tunneling diode canonical | 1 |
How this entity was disambiguated
This entity first appeared as the object of triple T8021368 — resolving that mention is where its identity was fixed. The disambiguator weighed these candidate entities and picked the highlighted one (or “None”, minting a new entity). This is how homonymy is resolved: the same surface form can point to different entities.
NED1
Entity disambiguation (via context triple)
gpt-5-mini-2025-08-07
Target entity: resonant tunneling diode Context triple: [Esaki diode, relatedTo, resonant tunneling diode]
-
A.
Esaki diode
The Esaki diode is a heavily doped semiconductor tunnel diode that exhibits negative differential resistance, enabling high-speed and microwave-frequency electronic applications.
-
B.
surface-barrier transistor
The surface-barrier transistor is an early high-frequency, high-speed transistor design that used metal contacts formed on a very thin germanium base, enabling faster operation than earlier point-contact and alloy-junction transistors.
-
C.
gallium arsenide
Gallium arsenide is a compound semiconductor material known for its high electron mobility and direct bandgap, widely used in high-frequency and optoelectronic devices such as microwave integrated circuits, LEDs, and laser diodes.
-
D.
Shockley diode equation
The Shockley diode equation is a fundamental formula in semiconductor physics that describes the current–voltage relationship of an ideal p–n junction diode.
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E.
Giaever tunneling
Giaever tunneling is a quantum mechanical electron tunneling phenomenon in superconductors that provided key experimental confirmation of BCS theory and earned Ivar Giaever a share of the 1973 Nobel Prize in Physics.
- F. None of above. chosen
- G. Unsure - the case is ambiguous/there is not enough information to decide.
NED2
Entity disambiguation (via description)
gpt-5-mini-2025-08-07
Target entity: resonant tunneling diode Target entity description: A resonant tunneling diode is a quantum-effect semiconductor device that exploits resonant tunneling through double potential barriers to achieve negative differential resistance and ultra-fast switching.
-
A.
Esaki diode
The Esaki diode is a heavily doped semiconductor tunnel diode that exhibits negative differential resistance, enabling high-speed and microwave-frequency electronic applications.
-
B.
surface-barrier transistor
The surface-barrier transistor is an early high-frequency, high-speed transistor design that used metal contacts formed on a very thin germanium base, enabling faster operation than earlier point-contact and alloy-junction transistors.
-
C.
gallium arsenide
Gallium arsenide is a compound semiconductor material known for its high electron mobility and direct bandgap, widely used in high-frequency and optoelectronic devices such as microwave integrated circuits, LEDs, and laser diodes.
-
D.
Shockley diode equation
The Shockley diode equation is a fundamental formula in semiconductor physics that describes the current–voltage relationship of an ideal p–n junction diode.
-
E.
Giaever tunneling
Giaever tunneling is a quantum mechanical electron tunneling phenomenon in superconductors that provided key experimental confirmation of BCS theory and earned Ivar Giaever a share of the 1973 Nobel Prize in Physics.
- F. None of above. chosen
Statements (48)
| Predicate | Object |
|---|---|
| instanceOf |
quantum-effect semiconductor device
ⓘ
tunneling diode ⓘ |
| basedOn | quantum mechanical tunneling ⓘ |
| belongsTo |
nanoelectronic devices
ⓘ
quantum transport devices ⓘ |
| contains |
quantum well
ⓘ
two potential barriers ⓘ |
| enables | ultra-fast switching ⓘ |
| exhibits | negative differential resistance ⓘ |
| exploits | resonant tunneling ⓘ |
| hasI-VCharacteristic | N-shaped ⓘ |
| hasKeyParameter |
barrier thickness
ⓘ
doping concentration ⓘ peak-to-valley current ratio ⓘ resonant energy level spacing ⓘ well width ⓘ |
| hasProperty |
bistability
ⓘ
high peak current density ⓘ hysteresis in I-V curve ⓘ room-temperature operation capability ⓘ very short switching time ⓘ |
| hasRegion |
collector
ⓘ
emitter ⓘ quantum well region ⓘ |
| implementedIn |
GaAs/AlGaAs heterostructures
ⓘ
III-V compound semiconductors ⓘ InGaAs/AlAs heterostructures ⓘ |
| isCharacterizedBy | double-barrier heterostructure ⓘ |
| isUsedFor |
compact microwave sources
ⓘ
monostable-bistable transition logic elements ⓘ nonlinear circuit elements ⓘ submillimeter-wave oscillators ⓘ ultra-high-speed analog-to-digital conversion ⓘ |
| operatesBy | alignment of quantized energy levels with Fermi level ⓘ |
| operatesThrough | double potential barriers ⓘ |
| requires |
epitaxial growth techniques
ⓘ
precise layer thickness control ⓘ |
| showsEffect |
current peak at resonance
ⓘ
current valley after resonance ⓘ |
| usedIn |
frequency multipliers
ⓘ
high-frequency circuits ⓘ high-speed digital circuits ⓘ high-speed oscillators ⓘ low-power logic circuits ⓘ microwave circuits ⓘ multi-valued logic circuits ⓘ terahertz devices ⓘ |
| wasIntensivelyStudiedIn | 1980s ⓘ |
How these facts were elicited
The pipeline generated the facts above by prompting gpt-5.1 with this entity's name + description and the instruction below.
Instruction
You are a knowledge base construction expert. Given a subject entity and a description of it, return factual statements that you know for the subject as a JSON list of dictionaries(triples), where keys must be "subject", "predicate" and "object". The number of facts may be very high, between 25 to 50 or more, for very popular subjects. For less popular subjects, the number of facts can be very low, like 5 or 10. # Requirements - If you don't know the subject at all, return an empty list. - If the subject is not a named entity, return an empty list. - Include at least one triple where predicate is "instanceOf". - Do not get too wordy. - Separate several objects into multiple triples with one object.
Input
Subject: resonant tunneling diode Description of subject: A resonant tunneling diode is a quantum-effect semiconductor device that exploits resonant tunneling through double potential barriers to achieve negative differential resistance and ultra-fast switching.
Referenced by (1)
Full triples — surface form annotated when it differs from this entity's canonical label.