Mott variable-range hopping

E111762

Mott variable-range hopping is a theoretical model in condensed matter physics that describes how electrons move through disordered materials at low temperatures via thermally activated tunneling between localized states over variable distances.

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Statements (48)

Predicate Object
instanceOf electronic conduction mechanism ⓘ
theoretical model in condensed matter physics ⓘ
transport model ⓘ
appliesTo Anderson-localized systems ⓘ
amorphous semiconductors ⓘ
disordered materials ⓘ
doped semiconductors ⓘ
glassy materials ⓘ
strongly disordered insulators ⓘ
assumes finite density of localized states at the Fermi level ⓘ
non-interacting or weakly interacting electrons ⓘ
concerns insulating side of the metal–insulator transition ⓘ
contrastsWith band conduction ⓘ
nearest-neighbor hopping ⓘ
dependsOn degree of disorder ⓘ
density of states at the Fermi level ⓘ
localization length of electronic wavefunctions ⓘ
describes electron transport in disordered systems ⓘ
thermally activated tunneling between localized states ⓘ
developedBy Nevill Francis Mott ⓘ
linked to: Nevill Mott
differsFrom Efros–Shklovskii variable-range hopping by neglecting Coulomb gap ⓘ
explains non-Arrhenius temperature dependence of resistivity in disordered insulators ⓘ
field condensed matter physics ⓘ
mesoscopic physics ⓘ
hasParameter characteristic temperature T0 ⓘ
spatial dimension d ⓘ
involves hopping conduction ⓘ
localized electronic states ⓘ
phonon-assisted tunneling ⓘ
variable energy difference between localized states ⓘ
variable hopping distance ⓘ
mathematicalForm σ(T) = σ0 · exp[-(T0/T)^{1/(d+1)}] ⓘ
namedAfter Nevill Francis Mott ⓘ
linked to: Nevill Mott
predicts conductivity proportional to exp[-(T0/T)^{1/(d+1)}] ⓘ
stretched-exponential temperature dependence of conductivity ⓘ
relatedTo Anderson localization ⓘ
Efros–Shklovskii variable-range hopping ⓘ
Mott insulator ⓘ
relevantAt low temperatures ⓘ
temperatureDependenceExponent 1/2 in one dimension ⓘ
1/3 in two dimensions ⓘ
1/4 in three dimensions ⓘ
usedFor analyzing transport in doped semiconductors near the metal-insulator transition ⓘ
interpreting low-temperature conductivity data ⓘ
modeling conduction in amorphous silicon ⓘ
modeling conduction in organic semiconductors ⓘ
validWhen electrons are localized rather than extended ⓘ
thermal energy is small compared to typical disorder energy scale ⓘ

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Referenced by (6)

Full triples — surface form annotated when it differs from this entity's canonical label.

Nevill Mott → knownFor → Mott variable-range hopping ⓘ
Nevill Francis Mott → notableConcept → Mott variable-range hopping ⓘ
subject linked to: Nevill
Electronic Processes in Non-Crystalline Materials → describedConcept → Mott variable-range hopping law ⓘ
linked to: Mott variable-range hopping
Nevill Francis Mott → knownFor → Mott variable-range hopping ⓘ
subject linked to: Mott
Coulomb gap → leadsTo → Efros–Shklovskii variable-range hopping law ⓘ
linked to: Mott variable-range hopping
Coulomb gap → relatedTo → Mott variable-range hopping ⓘ